Modeling the plastic relaxation onset in realistic SiGe islands on Si(001)

R. Gatti, A. Marzegalli, V. A. Zinovyev, F. Montalenti, and Leo Miglio
Phys. Rev. B 78, 184104 – Published 7 November 2008

Abstract

A detailed investigation of plastic relaxation onset in heteroepitaxial SiGe islands on Si(001) is presented. The strain field induced by a straight misfit-dislocation segment is modeled by finite-element-method (FEM) calculations in three dimensions, fully taking into account the interaction with the multifaceted free surfaces of realistic islands. The total elastic energies before and after the placement of a 60° dislocation segment in the most favorable position are therefore evaluated by a full FEM approach, for different island sizes and compositions. The critical volumes with composition for inserting the dislocation are finally obtained and successfully compared with the data in a report by Marzegalli et al. [Phys. Rev. Lett. 99, 235505 (2007)], where experimental values are compared to a simpler approach.

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  • Received 7 August 2008

DOI:https://doi.org/10.1103/PhysRevB.78.184104

©2008 American Physical Society

Authors & Affiliations

R. Gatti1,*, A. Marzegalli1, V. A. Zinovyev2, F. Montalenti1, and Leo Miglio1

  • 1Dipartimento di Scienza dei Materiali and L-NESS, Università degli Studi di Milano–Bicocca, Via Cozzi 53, I-20125 Milano, Italy
  • 2Institute of Semiconductor Physics, Novosibirsk 630090, Russia

  • *Corresponding author; riccardo.gatti@mater.unimib.it

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Vol. 78, Iss. 18 — 1 November 2008

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