Electron-hole contribution to the apparent sd exchange interaction in III-V dilute magnetic semiconductors

Cezary Śliwa and Tomasz Dietl
Phys. Rev. B 78, 165205 – Published 28 October 2008

Abstract

Spin splitting of photoelectrons in p-type and electrons in n-type III-V Mn-based diluted magnetic semiconductors is studied theoretically. It is demonstrated that the unusual sign and magnitude of the apparent sd exchange integral reported for GaAs:Mn arises from exchange interactions between electrons and holes bound to Mn acceptors. This interaction dominates over the coupling between electrons and Mn spins, so far regarded as the main source of spin-dependent phenomena. A reduced magnitude of the apparent sd exchange integral found in n-type materials is explained by the presence of repulsive Coulomb potentials at ionized Mn acceptors and a bottleneck effect.

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  • Received 29 August 2008

DOI:https://doi.org/10.1103/PhysRevB.78.165205

©2008 American Physical Society

Authors & Affiliations

Cezary Śliwa1,* and Tomasz Dietl1,2,†

  • 1Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL 02-668 Warszawa, Poland
  • 2Institute of Theoretical Physics, University of Warsaw, ul. Hoża 69, PL 00-681 Warszawa, Poland and ERATO Semiconductor Spintronics Project, Japan Science and Technology, Aleja Lotników 32/46, PL 02-668 Warszawa, Poland

  • *sliwa@ifpan.edu.pl
  • dietl@ifpan.edu.pl

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Issue

Vol. 78, Iss. 16 — 15 October 2008

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