Evidence of noncascade intracenter electron relaxation in shallow donor centers in silicon

S. G. Pavlov, H.-W. Hübers, P. M. Haas, J. N. Hovenier, T. O. Klaassen, R. Kh. Zhukavin, V. N. Shastin, D. A. Carder, and B. Redlich
Phys. Rev. B 78, 165201 – Published 6 October 2008

Abstract

Noncascade relaxation of photoexcited electrons on ionized donor centers has been observed in silicon doped by arsenic (Si:As) at low temperatures. Emission spectra of the Si:As terahertz intracenter laser give evidence of specific channels for the electron relaxation through low-lying donor states. The dominating relaxation channels strongly depend on the initial energy distribution of the nonequilibrium carriers. A relaxation step may exceed not only the energy gap to an adjacent lower-lying donor level but also the characteristic energy step as set by the energy and momentum conservation requirements for intravalley acoustic phonons.

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  • Received 14 July 2008

DOI:https://doi.org/10.1103/PhysRevB.78.165201

©2008 American Physical Society

Authors & Affiliations

S. G. Pavlov*, H.-W. Hübers, and P. M. Haas

  • Institute of Planetary Research, German Aerospace Center, 12489 Berlin, Germany

J. N. Hovenier and T. O. Klaassen

  • Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, The Netherlands

R. Kh. Zhukavin and V. N. Shastin

  • Institute for Physics of Microstructures, Russian Academy of Sciences, 603950 N. Novgorod, Russia

D. A. Carder and B. Redlich

  • FOM-Institute for Plasma Physics, 3439 MN Nieuwegein, The Netherlands

  • *Corresponding author. Institute of Planetary Research, German Aerospace Center, Rutherfordstrasse 2, D-12489 Berlin, Germany. FAX: +49 (0)30 67055507. sergeij.pavlov@dlr.de

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Vol. 78, Iss. 16 — 15 October 2008

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