Field-induced metal-insulator transition and switching phenomenon in correlated insulators

Naoyuki Sugimoto, Shigeki Onoda, and Naoto Nagaosa
Phys. Rev. B 78, 155104 – Published 6 October 2008

Abstract

We study the nonequilibrium switching phenomenon associated with the metal-insulator transition under electric field E in correlated insulators by a gauge-covariant Keldysh formalism. Due to the feedback effect of the resistive current I, this occurs as a first-order transition with a hysteresis of IV characteristics having a lower threshold electric field (104Vcm1) much weaker than that for the Zener breakdown. It is also found that the localized midgap states introduced by impurities and defects act as hot spots across which the resonant tunneling occurs selectively, which leads to the conductive filamentary paths and reduces the energy cost of the switching function.

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  • Received 8 September 2008

DOI:https://doi.org/10.1103/PhysRevB.78.155104

©2008 American Physical Society

Authors & Affiliations

Naoyuki Sugimoto*

  • Department of Applied Physics, University of Tokyo, Tokyo 7-3-1, Hongo, Tokyo 113-8656, Japan

Shigeki Onoda

  • Condensed Matter Theory Laboratory, The Institute of Physical and Chemical Research (RIKEN), Wako 351-0198, Japan

Naoto Nagaosa

  • Department of Applied Physics, University of Tokyo, Tokyo 7-3-1, Hongo, Tokyo 113-8656, Japan and Cross-Correlated Materials Research Group (CMRG), ASI, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan

  • *sugimoto@appi.t.u-tokyo.ac.jp

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Issue

Vol. 78, Iss. 15 — 15 October 2008

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