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Co2FeSi/GaAs/(Al,Ga)As spin light-emitting diodes: Competition between spin injection and ultrafast spin alignment

M. Ramsteiner, O. Brandt, T. Flissikowski, H. T. Grahn, M. Hashimoto, J. Herfort, and H. Kostial
Phys. Rev. B 78, 121303(R) – Published 18 September 2008
Physics logo See Synopsis: Spin injection with half-metals: A perfect match

Abstract

Electrical injection from the Heusler alloy Co2FeSi into (Al,Ga)As is investigated for different growth temperatures TG of the injector layer. Depending on TG, the spin polarization of injected electrons in the semiconductor is determined by two competing mechanisms: actual spin injection at the Co2FeSi/(Al,Ga)As interface and ultrafast spin alignment in the (Al,Ga)As layer. This layer is strongly affected by the thermally activated diffusion of Co, Fe, and Si during the growth of the Co2FeSi layers. Despite the electrical compensation and magnetic transformation in the underlying semiconductor structure, a spin-injection efficiency of at least 50% is achieved as deduced from the analysis of electroluminescence and time-resolved photoluminescence data.

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  • Received 24 July 2008

DOI:https://doi.org/10.1103/PhysRevB.78.121303

©2008 American Physical Society

Synopsis

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Spin injection with half-metals: A perfect match

Published 22 September 2008

The efficient injection of polarized spins from magnetic materials into semiconductors, a prerequisite for spintronics applications, is a formidable challenge. With ferromagnetic Co2FeSi it is now possible to achieve a spin injection efficiency of close to 50%.

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Authors & Affiliations

M. Ramsteiner*, O. Brandt, T. Flissikowski, H. T. Grahn, M. Hashimoto, J. Herfort, and H. Kostial

  • Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany

  • *ramsteiner@pdi-berlin.de
  • Present address: Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA.

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Issue

Vol. 78, Iss. 12 — 15 September 2008

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