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Diffusionlike electric-field migration in the channel of organic field-effect transistors

Takaaki Manaka, Fei Liu, Martin Weis, and Mitsumasa Iwamoto
Phys. Rev. B 78, 121302(R) – Published 17 September 2008

Abstract

Time-resolved microscopic optical second-harmonic generation (TRM-SHG) technique provides a different approach to study the dynamics of carriers in organic field-effect transistor (OFET). Different from many common methods, the TRM SHG directly probes the transient electric-field distribution in the channel of the OFET in high temporal and spatial resolutions. In this work we used this technique to quantitatively study migration of the peak of the electric field. We found that under a broad range of experimental conditions, the migration of the peak of the electric field follows a diffusionlike behavior; namely, the square of the peak position of x¯ is proportional to time t. Based on a two-dimensional computational simulation and general carrier transport mechanism, we proposed that this behavior arises from a simple relation, μγx¯2/(t|Vgs|), where μ is the carrier mobility, γ is constant about 0.5, and Vgs is the gate voltage with respect to the source voltage. The experimental and simulation data well supported this relationship.

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  • Received 27 July 2008

DOI:https://doi.org/10.1103/PhysRevB.78.121302

©2008 American Physical Society

Authors & Affiliations

Takaaki Manaka1,*, Fei Liu2, Martin Weis1, and Mitsumasa Iwamoto1,†

  • 1Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
  • 2Center for Advanced Study, Tsinghua University, Beijing, 100084, China

  • *manaka@ome.pe.titech.ac.jp
  • iwamoto@pe.titech.ac.jp

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Issue

Vol. 78, Iss. 12 — 15 September 2008

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