Determination of activation parameters for dislocation formation from a surface in fcc metals by atomistic simulations

P. Hirel, J. Godet, S. Brochard, L. Pizzagalli, and P. Beauchamp
Phys. Rev. B 78, 064109 – Published 12 August 2008; Erratum Phys. Rev. B 81, 059901 (2010)

Abstract

Defects in free surfaces are expected to be seeds for the nucleation of dislocations, which is the likely way nanoscale materials suffer plastic deformation. The nucleation results in the competition between the image force attracting the dislocation to the surface and the applied strain. In this work, two methods based on molecular dynamics simulations using an embedded atom method (EAM) potential are used to determine the activation energy and the critical radius for the formation of dislocations from a surface defect in a typical fcc metal.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 25 April 2008

DOI:https://doi.org/10.1103/PhysRevB.78.064109

©2008 American Physical Society

Erratum

Authors & Affiliations

P. Hirel*, J. Godet, S. Brochard, L. Pizzagalli, and P. Beauchamp

  • Laboratoire PHYMAT, UMR 6630 CNRS, Université de Poitiers, Bvd M. & P. Curie, Boite Postale 30179 – 86962 Futuroscope Chasseneuil Cedex, France

  • *pierre.hirel@etu.univ-poitiers.fr

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 78, Iss. 6 — 1 August 2008

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×