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Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers

M. Bonfanti, E. Grilli, M. Guzzi, M. Virgilio, G. Grosso, D. Chrastina, G. Isella, H. von Känel, and A. Neels
Phys. Rev. B 78, 041407(R) – Published 25 July 2008

Abstract

Direct-gap and indirect-gap transitions in strain-compensated Ge/SiGe multiple quantum wells with Ge-rich SiGe barriers have been studied by optical transmission spectroscopy and photoluminescence experiments. An sp3d5s tight-binding model has been adopted to interpret the experimental results. Photoluminescence spectra and their comparison with theoretical calculations prove the existence of type-I band alignment in compressively strained Ge quantum wells grown on relaxed Ge-rich SiGe buffers. The high quality of the transmission spectra opens up other perspectives for application of these structures in near-infrared optical modulators.

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  • Received 25 June 2008

DOI:https://doi.org/10.1103/PhysRevB.78.041407

©2008 American Physical Society

Authors & Affiliations

M. Bonfanti, E. Grilli, and M. Guzzi

  • CNISM and L-NESS, Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, Via Cozzi 53, I-20125 Milano, Italy

M. Virgilio and G. Grosso

  • NEST-INFM, Piazza San Silvestro 12, 5612 Pisa, Italy and Dipartimento di Fisica “E. Fermi,” Università di Pisa, Largo Pontecorvo 3, I-56127 Pisa, Italy

D. Chrastina, G. Isella, and H. von Känel

  • CNISM and L-NESS, Dipartimento di Fisica del Politecnico di Milano, Polo di Como, Via Anzani 42, I-22100 Como, Italy

A. Neels

  • Institute of Microtechnology, University of Neuchâtel, Rue Jaquet-Droz 1, CH-2002 Neuchâtel, Switzerland

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Issue

Vol. 78, Iss. 4 — 15 July 2008

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