Crystallographic phase transition and island height selection in In/Si(111) growth

J. Chen, M. Hupalo, M. Ji, C. Z. Wang, K. M. Ho, and M. C. Tringides
Phys. Rev. B 77, 233302 – Published 3 June 2008

Abstract

In/Si(111) has been studied with spot profile analysis low-energy electron diffraction, scanning tunneling microscope, and first-principles total energy calculations to identify its growth morphology at low temperatures. Of the different substrate interfaces used, only In growth on Si(111)-Pb-α3×3 has resulted in uniform height fcc (111) four-layer islands. A transition to the bulk bct (101) oriented islands is favored at higher temperatures T>250K and/or larger coverages θ>5ML. These results suggest two stabilizing effects for the preferred morphologies, i.e., quantum size effects and orientation dependent surface and interface energies. These stabilizing effects are suppported from first-principles calculations.

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  • Received 3 April 2008

DOI:https://doi.org/10.1103/PhysRevB.77.233302

©2008 American Physical Society

Authors & Affiliations

J. Chen, M. Hupalo, M. Ji, C. Z. Wang, K. M. Ho, and M. C. Tringides*

  • Department of Physics, Ames Laboratory US, DOE, Iowa Sate University,Iowa 50011, USA

  • *Corresponding author. FAX: 515 294 0689; tringides@ameslab.gov

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Issue

Vol. 77, Iss. 23 — 15 June 2008

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