Optical conductivity of bilayer graphene with and without an asymmetry gap

E. J. Nicol and J. P. Carbotte
Phys. Rev. B 77, 155409 – Published 7 April 2008

Abstract

When a bilayer of graphene is placed in a suitably configured field effect device, an asymmetry gap can be generated and the carrier concentration made different in each layer. This provides a tunable semiconducting gap, and the valence and conductance bands no longer meet at the two Dirac points of the graphene Brillouin zone. We calculate the optical conductivity of such a semiconductor with particular emphasis on the optical spectral weight redistribution brought about by changes in gap and chemical potential due to charging. We derive an algebraic formula for an arbitrary value of the chemical potential for the case of the bilayer conductivity without a gap.

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  • Received 11 January 2008

DOI:https://doi.org/10.1103/PhysRevB.77.155409

©2008 American Physical Society

Authors & Affiliations

E. J. Nicol*

  • Department of Physics, University of Guelph, Guelph, Ontario, Canada N1G 2W1

J. P. Carbotte

  • Department of Physics and Astronomy, McMaster University, Hamilton, Ontario, Canada L8S 4M1

  • *nicol@physics.uoguelph.ca

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Vol. 77, Iss. 15 — 15 April 2008

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