High-field magnetocrystalline anisotropic resistance effect in (Ga,Mn)As

D. Wu, Peng Wei, E. Johnston-Halperin, D. D. Awschalom, and Jing Shi
Phys. Rev. B 77, 125320 – Published 17 March 2008

Abstract

As the magnetization rotates in the (001) plane of epitaxial (Ga,Mn)As films, we observe both two- and fourfold oscillations of comparable magnitude in the longitudinal resistivity. This behavior is different from the usual anisotropic magnetoresistance effect in polycrystalline films. The fourfold or cubic symmetry vanishes at the Curie temperature TC, indicating that it originates from the long-range ferromagnetic phase in single crystal films. In contrast, the twofold symmetry persists above TC, suggesting its origin to be from the alignment of spins with random orientations. However, the transverse, or planar Hall, resistivity only contains a twofold oscillation. The temperature dependence of the magnetocrystalline anisotropic resistance effect is explained by a two-component model.

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  • Received 25 October 2007

DOI:https://doi.org/10.1103/PhysRevB.77.125320

©2008 American Physical Society

Authors & Affiliations

D. Wu1,2, Peng Wei1, E. Johnston-Halperin3, D. D. Awschalom4, and Jing Shi1

  • 1Department of Physics and Astronomy, University of California, Riverside, California 92521, USA
  • 2National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, 22 Hankou Road, Nanjing 210093, China
  • 3Department of Physics, Ohio State University, Columbus, Ohio 43210, USA
  • 4Department of Physics, University of California, Santa Barbara, California 93106, USA

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Vol. 77, Iss. 12 — 15 March 2008

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