Colossal positive magnetoresistance in a doped nearly magnetic semiconductor

Rongwei Hu, K. J. Thomas, Y. Lee, T. Vogt, E. S. Choi, V. F. Mitrović, R. P. Hermann, F. Grandjean, P. C. Canfield, J. W. Kim, A. I. Goldman, and C. Petrovic
Phys. Rev. B 77, 085212 – Published 27 February 2008

Abstract

We report on a positive colossal magnetoresistance (MR) induced by metallization of FeSb2, a nearly magnetic or “Kondo” semiconductor with 3d ions. We discuss the contribution of orbital MR and quantum interference to the enhanced magnetic field response of electrical resistivity.

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  • Received 15 October 2007

DOI:https://doi.org/10.1103/PhysRevB.77.085212

©2008 American Physical Society

Authors & Affiliations

Rongwei Hu1,2, K. J. Thomas1,*, Y. Lee3, T. Vogt1,†, E. S. Choi4, V. F. Mitrović2, R. P. Hermann5,‡, F. Grandjean5, P. C. Canfield6, J. W. Kim6, A. I. Goldman6, and C. Petrovic1

  • 1Condensed Matter Physics, Brookhaven National Laboratory, Upton, New York 11973, USA
  • 2Physics Department, Brown University, Providence, Rhode Island 02912, USA
  • 3Department of Earth System Sciences, Yonsei University, Seoul 120749, Korea
  • 4NHMFL/Physics, Florida State University, Tallahassee, Florida 32310, USA
  • 5Department of Physics, Université de Liège, B-4000 Liège, Belgium
  • 6Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011, USA

  • *Present address: Nature Publishing Group, London, UK.
  • Present address: Department of Chemistry and Biochemistry, University of South Carolina, Columbia, SC 29208, USA.
  • Present address: Institut für Festkörperforschung, Forschungzentrum Jülich GmbH, D-52425 Jülich, Germany.

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Issue

Vol. 77, Iss. 8 — 15 February 2008

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