Hole states in wide band-gap diluted magnetic semiconductors and oxides

Tomasz Dietl
Phys. Rev. B 77, 085208 – Published 25 February 2008

Abstract

Puzzling disagreement between photoemission and optical findings in magnetically doped GaN and ZnO is explained within a generalized alloy theory. The strong coupling between valence-band holes and localized spins gives rise to a midgap Zhang–Rice-like state, to a sign reversal of the apparent pd exchange integral, and to an increase of the band gap with the magnetic ion concentration.

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  • Received 2 December 2007

DOI:https://doi.org/10.1103/PhysRevB.77.085208

©2008 American Physical Society

Authors & Affiliations

Tomasz Dietl

  • Institute of Physics, Polish Academy of Science and ERATO Semiconductor Spintronics Project, Japan Science and Technology Agency, al. Lotników 32/46, PL-02-668 Warszawa, Poland and Institute of Theoretical Physics, University of Warsaw, PL-00-681 Warszawa, Poland

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Issue

Vol. 77, Iss. 8 — 15 February 2008

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