Doping-dependence of nodal quasiparticle properties in high-Tc cuprates studied by laser-excited angle-resolved photoemission spectroscopy

K. Ishizaka, T. Kiss, S. Izumi, M. Okawa, T. Shimojima, A. Chainani, T. Togashi, S. Watanabe, C.-T. Chen, X. Y. Wang, T. Mochiku, T. Nakane, K. Hirata, and S. Shin
Phys. Rev. B 77, 064522 – Published 28 February 2008

Abstract

We investigate the doping dependent low-energy, low temperature (T=5K) properties of nodal quasiparticles in the d-wave superconductor Bi2.1Sr1.9CaCu2O8+δ (Bi2212). By utilizing ultrahigh resolution laser-excited angle-resolved photoemission spectroscopy, we obtain precise band dispersions near EF, mean free paths, and scattering rates (Γ) of quasiparticles. For optimally and overdoped samples, we obtain very sharp quasiparticle peaks of 8 and 6meV full width at half maximum, respectively. The value of Γ for optimally doped sample is in good accordance with terahertz conductivity. For all doping levels, we find the energy dependence of Γω, while Γ(ω=0) shows a monotonic increase from overdoping to underdoping. The doping-dependence suggests the role of electronic inhomogeneity on the nodal quasiparticle scattering at low temperature (5K0.07Tc) pronounced in the underdoped region. The quasiparticle peak spectra match well with a single Lorentzian function, thus indicating that the nodal carriers can be described as well-defined quasiparticles, even in the underdoped region.

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  • Received 13 September 2007

DOI:https://doi.org/10.1103/PhysRevB.77.064522

©2008 American Physical Society

Authors & Affiliations

K. Ishizaka1, T. Kiss1, S. Izumi1, M. Okawa1, T. Shimojima1, A. Chainani2, T. Togashi2, S. Watanabe1, C.-T. Chen3, X. Y. Wang3, T. Mochiku4, T. Nakane4, K. Hirata4, and S. Shin1,2

  • 1Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan
  • 2The Institute of Physical and Chemical Research (RIKEN), Sayo-gun, Hyogo 679-5143, Japan
  • 3Beijing Center for Crystal R&D, Chinese Academy of Sciences, Zhongguancun, Beijing 100080, People’s Republic of China
  • 4National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan

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Issue

Vol. 77, Iss. 6 — 1 February 2008

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