Impurity scattering and Mott’s formula in graphene

Tomas Löfwander and Mikael Fogelström
Phys. Rev. B 76, 193401 – Published 7 November 2007

Abstract

We present calculations of the thermal and electric linear response in graphene, including disorder in the self-consistent t-matrix approximation. For strong impurity scattering, near the unitary limit, the formation of a band of impurity states near the Fermi level leads to that Mott’s relation holds at low temperature. For higher temperatures, there are strong deviations due to the linear density of states. The low-temperature thermopower is proportional to the inverse of the impurity potential and the inverse of the impurity density. Information about impurity scattering in graphene can be extracted from the thermopower, either measured directly or extracted via Mott’s relation from the electron-density dependence of the electric conductivity.

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  • Received 10 September 2007

DOI:https://doi.org/10.1103/PhysRevB.76.193401

©2007 American Physical Society

Authors & Affiliations

Tomas Löfwander and Mikael Fogelström

  • Department of Microtechnology and Nanoscience, Chalmers University of Technology, S-412 96 Göteborg, Sweden

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Issue

Vol. 76, Iss. 19 — 15 November 2007

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