Threshold behavior in kinetic electron emission from oxide insulators

Han Kook Kim, Tae Seung Kim, Jihwa Lee, and Sam K. Jo
Phys. Rev. B 76, 165434 – Published 26 October 2007

Abstract

We have measured the yields γ of the secondary electrons emitted from MgO, BaO, and SiO2 surfaces by impact of slow noble gas ions and identified the apparent threshold ion energies (E0) of kinetic electron emission from the discontinuity points in the γE curves. We found that the center-of-mass threshold energy (Eth) in the binary collision with an oxygen anion is projectile independent and equal to the sum of the band-gap energy and the electron affinity. Based on this threshold behavior, we propose that kinetic emission from oxide insulators occurs by direct collisional excitation of O2p electron to a continuum state via repulsive interactions with the electrons of a projectile.

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  • Received 14 November 2006

DOI:https://doi.org/10.1103/PhysRevB.76.165434

©2007 American Physical Society

Authors & Affiliations

Han Kook Kim, Tae Seung Kim, and Jihwa Lee*

  • School of Chemical and Biological Engineering, Seoul National University, Seoul 151-744, South Korea

Sam K. Jo

  • Department of Chemistry, Kyung Won University, Sungnam, Kyungki 461-701, South Korea

  • *Corresponding author; jihwalee@plaza.snu.ac.kr

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Issue

Vol. 76, Iss. 16 — 15 October 2007

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