Excitonic giant Zeeman effect in GaN:Mn3+

W. Pacuski, D. Ferrand, J. Cibert, J. A. Gaj, A. Golnik, P. Kossacki, S. Marcet, E. Sarigiannidou, and H. Mariette
Phys. Rev. B 76, 165304 – Published 5 October 2007

Abstract

We describe a direct observation of the excitonic giant Zeeman splitting in Ga1xMnxN, a wide-gap III-V diluted magnetic semiconductor. Reflectivity and absorption spectra measured at low temperatures display the A and B excitons, with a shift under magnetic field due to s,pd exchange interactions. Using an excitonic model, we determine the difference of exchange integrals between Mn3+ and free carriers in GaN, N0(αβ)=1.2±0.2eV. Assuming a reasonable value of α, this implies a positive sign of β which corresponds to a rarely observed ferromagnetic interaction between the magnetic ions and the holes involved in the transition.

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  • Received 2 March 2007

DOI:https://doi.org/10.1103/PhysRevB.76.165304

©2007 American Physical Society

Authors & Affiliations

W. Pacuski1,2,*, D. Ferrand1,†, J. Cibert1, J. A. Gaj2, A. Golnik2, P. Kossacki2, S. Marcet1, E. Sarigiannidou1,‡, and H. Mariette1

  • 1Institut Néel/CNRS, Université J. Fourier, Boîte Postale 166, F-38042 Grenoble Cedex 9, France
  • 2Institute of Experimental Physics, Warsaw University, Hoża 69, PL-00-681 Warszawa, Poland

  • *wojciech.pacuski@fuw.edu.pl
  • david.ferrand@grenoble.cnrs.fr
  • Permanent address: LMGP, BP 257, INPGrenoble Minatec, 3 parvis Louis Néel, 38016 Grenoble, France.

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Vol. 76, Iss. 16 — 15 October 2007

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