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In-plane magnetic-field-induced metal-insulator transition in (311)A GaAs two-dimensional hole systems probed by thermopower

S. Faniel, L. Moldovan, A. Vlad, E. Tutuc, N. Bishop, S. Melinte, M. Shayegan, and V. Bayot
Phys. Rev. B 76, 161307(R) – Published 12 October 2007

Abstract

We report thermopower measurements in dilute (311)A GaAs two-dimensional holes subjected to an in-plane magnetic field B that drives the system through a metal-insulator transition (MIT). The diffusion thermopower Sd decreases linearly with temperature at low B for both low-mobility [011¯] and high-mobility [2¯33] directions, as expected for metallic systems. At high B, in the insulating phase, Sd changes sign along [011¯], while Sd drops to zero along [2¯33]. This behavior suggests that the system does not undergo any ground-state modification but, rather, that the apparent MIT transition is accompanied by a dramatic change in the dominant scattering mechanisms.

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  • Received 9 August 2007

DOI:https://doi.org/10.1103/PhysRevB.76.161307

©2007 American Physical Society

Authors & Affiliations

S. Faniel1,*, L. Moldovan1,2, A. Vlad1, E. Tutuc3, N. Bishop3, S. Melinte1, M. Shayegan3, and V. Bayot1

  • 1Cermin, PCPM and DICE Labs, Université Catholique de Louvain, 1348 Louvain-la-Neuve, Belgium
  • 2Department of Electronics, University of Oradea, 410087 Oradea, Romania
  • 3Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA

  • *faniel@pcpm.ucl.ac.be

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Vol. 76, Iss. 16 — 15 October 2007

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