Insulator to semiconductor transition and magnetic properties of the one-dimensional S=12 system In2VO5

A. Möller, T. Taetz, N. Hollmann, J. A. Mydosh, V. Kataev, M. Yehia, E. Vavilova, and B. Büchner
Phys. Rev. B 76, 134411 – Published 16 October 2007

Abstract

We report structural, magnetization, electrical resistivity, nuclear magnetic resonance, and electron spin resonance data of the complex transition metal oxide In2VO5 in which structurally well-defined V-O chains are realized. An itinerant character of the vanadium d electrons and ferromagnetic correlations, revealed at high temperatures, are contrasted with the insulating behavior and predominantly antiferromagnetic exchange between the localized V4+S=12 magnetic moments which develop below a certain characteristic temperature T*120K. Eventually, the compound exhibits short-range magnetic order at TSRO20K. We attribute this crossover occurring around T* to the unusual anisotropic thermal contraction of the lattice which changes significantly the overlap integrals and the character of magnetic intra- and interchain interactions.

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  • Received 20 June 2007

DOI:https://doi.org/10.1103/PhysRevB.76.134411

©2007 American Physical Society

Authors & Affiliations

A. Möller1, T. Taetz1, N. Hollmann2, J. A. Mydosh2, V. Kataev3,4, M. Yehia3, E. Vavilova3,4, and B. Büchner3

  • 1Institut für Anorganische Chemie, Universität zu Köln, Greinstrasse 6, 50939 Köln, Germany
  • 2II. Physikalisches Institut, Universität zu Köln, Zülpicher Strasse 77, 50937 Köln, Germany
  • 3Institute for Solid State and Materials Research, IFW Dresden, P.O. Box 270116, D-01171 Dresden, Germany
  • 4Kazan Physical Technical Institute, Russian Academy of Sciences, 420029 Kazan, Russia

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Issue

Vol. 76, Iss. 13 — 1 October 2007

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