Abstract
We demonstrate an electrostatic trap for indirect excitons in a field-effect structure based on coupled GaAs quantum wells. Within the plane of a double quantum well, indirect excitons are trapped at the perimeter of a area sandwiched between the surface of the GaAs heterostructure and a semitransparent metallic top gate. The trapping mechanism is well explained by a combination of the quantum confined Stark effect and local field enhancement. We find the one-dimensional trapping potentials in the quantum well plane to be nearly harmonic with high spring constants exceeding .
- Received 27 March 2007
DOI:https://doi.org/10.1103/PhysRevB.76.085304
©2007 American Physical Society