Sensitivity to hole doping of Cu L3 resonant spectroscopies: Inelastic x-ray scattering and photoemission of La2xSrxCuO4

G. Ghiringhelli, N. B. Brookes, C. Dallera, A. Tagliaferri, and L. Braicovich
Phys. Rev. B 76, 085116 – Published 13 August 2007

Abstract

We present Cu L3 edge resonant inelastic x-ray scattering (RIXS) and resonant x-ray photoemission spectroscopy (RXPS) of La2xSrxCuO4 (x=0.0, 0.13, and 0.27). RIXS is found to be much more sensitive to the hole doping level than resonant photoemission. RIXS allows us to determine the average energy of dd excitations of both undoped and hole doped sites. The trade-off between the Raman and non-Raman spectral features depends on the doping level strongly in RIXS but weakly in RXPS. These experimental findings are consistently interpreted within a cluster model: The role of nonlocal core hole screening in the intermediate state is shown to be crucial. Nonlocal screening has an impact also on the interpretation of the L3 x-ray absorption spectra in cuprates.

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  • Received 8 March 2007

DOI:https://doi.org/10.1103/PhysRevB.76.085116

©2007 American Physical Society

Authors & Affiliations

G. Ghiringhelli1, N. B. Brookes2, C. Dallera3, A. Tagliaferri4, and L. Braicovich3

  • 1CNR/INFM COHERENTIA and Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano, Italy
  • 2European Synchrotron Radiation Facility, B.P. 220, 38043 Grenoble Cédex, France
  • 3CNR/INFM SOFT and Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano, Italy
  • 4CNISM and Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano, Italy

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Vol. 76, Iss. 8 — 15 August 2007

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