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Carrier multiplication yields of CdSe and CdTe nanocrystals by transient photoluminescence spectroscopy

Gautham Nair and Moungi G. Bawendi
Phys. Rev. B 76, 081304(R) – Published 13 August 2007
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Abstract

Engineering semiconductors to enhance carrier multiplication (CM) could lead to increased photovoltaic cell performance and a significant widening of the materials range suitable for future solar technologies. Semiconductor nanocrystals (NCs) have been proposed as a favorable structure for CM enhancement, and recent measurements by transient absorption have shown evidence for highly efficient CM in lead chalcogenide and CdSe NCs. We report here an assessment of CM yields in CdSe and CdTe NCs by a quantitative analysis of biexciton and exciton signatures in transient photoluminescence decays. Although the technique is particularly sensitive due to enhanced biexciton radiative rates relative to the exciton, kBXrad>2kXrad, we find no evidence for CM in CdSe and CdTe NCs up to photon energies ω>3Eg, well above previously reported relative energy thresholds.

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  • Received 17 July 2007

DOI:https://doi.org/10.1103/PhysRevB.76.081304

©2007 American Physical Society

Authors & Affiliations

Gautham Nair and Moungi G. Bawendi*

  • Department of Chemistry, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA

  • *mgb@mit.edu

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Issue

Vol. 76, Iss. 8 — 15 August 2007

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