High-symmetry high-stability silicon fullerenes: A first-principles study

Aristides D. Zdetsis
Phys. Rev. B 76, 075402 – Published 3 August 2007

Abstract

It is shown by ab initio calculations that very stable high-symmetry fullerenes of the form SinHn, n=20, 28, 30, 36, 50, and 60, can be formed with large energy gaps suitable for optoelectronic and other applications. Quantum confinement seems to be violated if one neglects the essentially two-dimensional nature of the electron gas. Comparison with similar carbon fullerenes, such as C20H20 and C60H60, reveals full similarity in their electronic and geometrical structures, which is suggestive of possible routes for their synthesis. These silicon fullerenes constitute the best manifestation of carbon and silicon homology.

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  • Received 10 May 2007

DOI:https://doi.org/10.1103/PhysRevB.76.075402

©2007 American Physical Society

Authors & Affiliations

Aristides D. Zdetsis

  • Department of Physics, University of Patras, GR-26500 Patras, Greece

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Issue

Vol. 76, Iss. 7 — 15 August 2007

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