Optical determination of the effective wetting layer thickness and composition in InAsGa(In)As quantum dots

M. Hugues, M. Teisseire, J.-M. Chauveau, B. Vinter, B. Damilano, J.-Y. Duboz, and J. Massies
Phys. Rev. B 76, 075335 – Published 21 August 2007

Abstract

A different approach to determining the wetting layer thickness and composition in InAsGa(In)As quantum dot systems is proposed. This method combines the energy separation between heavy and light hole states determined experimentally and the results of a simple envelope function calculation to unambiguously obtain the wetting layer parameters. The heavy and light hole states are probed by photoluminescence excitation, but the proposed method can be extended to all absorptionlike measurements. For InAsGaAs quantum dots, an effective wetting layer thickness of 3.6 monolayers and an average indium composition of 43% are obtained, in good agreement with results of structural characterization. Moreover, the optical transitions for InAs quantum dots covered by a 5nm thick (Ga,In)As cap layer with indium content up to 20% have also been probed. Several transitions resulting from the quantum well formed by the wetting layer and the cap layer have been detected. Using the wetting layer parameters deduced for InAsGaAs quantum dots, the calculated e1hh1, e1lh1, e1hh2, and e2hh2 transition energies correspond very well with the peak energies of the photoluminescence excitation spectra.

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  • Received 20 April 2007

DOI:https://doi.org/10.1103/PhysRevB.76.075335

©2007 American Physical Society

Authors & Affiliations

M. Hugues1, M. Teisseire1, J.-M. Chauveau1,2, B. Vinter1,2, B. Damilano1, J.-Y. Duboz1, and J. Massies1

  • 1Centre National de la Recherche Scientifique, Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, rue B. Grégory, 06560 Sophia Antipolis, France
  • 2Physics Department, University of Nice-Sophia Antipolis, 06108 Nice Cedex 2, France

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Issue

Vol. 76, Iss. 7 — 15 August 2007

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