Effect of deposition rate on morphology evolution of metal-on-insulator films grown by pulsed laser deposition

Jeffrey M. Warrender and Michael J. Aziz
Phys. Rev. B 76, 045414 – Published 18 July 2007

Abstract

Ag films were grown by pulsed laser deposition on insulating SiO2 and mica substrates and exhibited a morphological progression beginning with nucleation of three-dimensional islands and culminating in a continuous, electrically conducting film. The rate of advancement through this progression with increasing pulse frequency was studied with experiments and with kinetic Monte Carlo (KMC) simulations. Experiments at 93 and 135°C give exponents of 0.34 and 0.31, respectively, for the scaling of the electrical percolation thickness with pulse frequency. Simulations predicted an exponent of 0.34, in excellent agreement with the experiments. Both of these values agree well with the previously reported analytic value of 0.33 for the scaling of the morphology transition thickness with average flux in continuous deposition. Simulations also predicted that data collapse for island density vs amount deposited would be observed for experiments run at the same value of the parameter Bf at constant amount deposited per pulse, where B is the kinetic rate constant for coalescence and f is the pulse frequency. Measurements of the percolation transition were consistent with this prediction. These findings indicate that the elementary processes included in the KMC simulation—substrate terrace diffusion, irreversible aggregation of hemispherical islands, and two-island coalescence, but neglecting the effects of kinetic energy—are sufficient to explain the behavior observed when the pulse rate is varied at constant kinetic energy.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 2 February 2007

DOI:https://doi.org/10.1103/PhysRevB.76.045414

©2007 American Physical Society

Authors & Affiliations

Jeffrey M. Warrender1,2,* and Michael J. Aziz1

  • 1Harvard School of Engineering and Applied Sciences, 29 Oxford Street, Cambridge, Massachusetts 02138, USA
  • 2U.S. Army Benét Laboratories, 1 Buffington Street, Watervliet, New York 12189, USA

  • *Electronic address: jwarrend@post.harvard.edu

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 76, Iss. 4 — 15 July 2007

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×