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Dopant segregation and giant magnetoresistance in manganese-doped germanium

A. P. Li, C. Zeng, K. van Benthem, M. F. Chisholm, J. Shen, S. V. S. Nageswara Rao, S. K. Dixit, L. C. Feldman, A. G. Petukhov, M. Foygel, and H. H. Weitering
Phys. Rev. B 75, 201201(R) – Published 10 May 2007

Abstract

Dopant segregation in a MnxGe1x dilute magnetic semiconductor leads to a remarkable self-assembly of Mn-rich nanocolumns, embedded in a fully compensated Ge matrix. Samples grown at 80°C display a giant positive magnetoresistance that correlates directly with the distribution of magnetic impurities. Annealing at 200°C increases Mn substitution in the host matrix above the threshold for the insulator-metal transition, while maintaining the columnar morphology, and results in global ferromagnetism with conventional negative magnetoresistance. The qualitative features of magnetism and transport in this nanophase material are thus extremely sensitive to the precise location and distribution of the magnetic dopants.

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  • Received 18 April 2007

DOI:https://doi.org/10.1103/PhysRevB.75.201201

©2007 American Physical Society

Authors & Affiliations

A. P. Li1,2, C. Zeng3, K. van Benthem1,2, M. F. Chisholm2, J. Shen1,2, S. V. S. Nageswara Rao4,5, S. K. Dixit4, L. C. Feldman2,4,5, A. G. Petukhov6, M. Foygel6, and H. H. Weitering2,3

  • 1Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
  • 2Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
  • 3Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996, USA
  • 4Interdisciplinary Program in Materials Science, Vanderbilt University, Nashville, Tennessee 37235, USA
  • 5Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA
  • 6Physics Department, South Dakota School of Mines and Technology, Rapid City, South Dakota 57701, USA

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Issue

Vol. 75, Iss. 20 — 15 May 2007

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