Electronic shell structure and carrier dynamics of high aspect ratio InP single quantum dots

Gareth J. Beirne, Matthias Reischle, Robert Roßbach, Wolfgang-Michael Schulz, Michael Jetter, Jan Seebeck, Paul Gartner, Christopher Gies, Frank Jahnke, and Peter Michler
Phys. Rev. B 75, 195302 – Published 3 May 2007

Abstract

Systematic excitation-power-density dependent and time-resolved single-dot photoluminescence studies have been performed on type-I InPGa0.51In0.49P quantum dots. These dots are rather flat and therefore exhibit larger than normal single-dot ground-state transition energies ranging from 1.791 to 1.873eV. As a result of their low height, the dots have a very high aspect ratio (ratio of width to height) of approximately 27:1. In general, even at high excitation power densities, the dots with ground-state transition energies above 1.82eV exhibit only s-shell emission, while the larger dots exhibiting ground-state emission below 1.82eV tend to exhibit emission from several (in some cases up to eight) shells. Calculations indicate that this change is due to the smaller dots having only one confined election level while the larger dots have two or more. Time-resolved investigations indicate the presence of fast carrier relaxation and recombination processes for both dot types, however, only the larger dots display clear interlevel relaxation effects as expected. The temporal behavior has been qualitatively simulated using a rate equation model. Also, in a more detailed analysis, the fast carrier relaxation is described on the basis of a quantum kinetic treatment of the carrier-phonon interaction. Finally, the dots display a clear single-photon emission signature in photon statistics measurements.

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  • Received 14 December 2006

DOI:https://doi.org/10.1103/PhysRevB.75.195302

©2007 American Physical Society

Authors & Affiliations

Gareth J. Beirne1, Matthias Reischle1, Robert Roßbach1, Wolfgang-Michael Schulz1, Michael Jetter1, Jan Seebeck2, Paul Gartner2,3, Christopher Gies2, Frank Jahnke2, and Peter Michler1

  • 1Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany
  • 2Institut für Theoretische Physik, Universität Bremen, 28334 Bremen, Germany
  • 3National Institute for Materials Physics, POB MG-7, Bucharest-Magurele, Romania

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Vol. 75, Iss. 19 — 15 May 2007

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