Effect of Co and O defects on the magnetism in Co-doped ZnO: Experiment and theory

G. S. Chang, E. Z. Kurmaev, D. W. Boukhvalov, L. D. Finkelstein, S. Colis, T. M. Pedersen, A. Moewes, and A. Dinia
Phys. Rev. B 75, 195215 – Published 29 May 2007

Abstract

The electronic structure of Zn1xCoxO (x=0.02, 0.06, and 0.10) diluted magnetic semiconductors is investigated using soft x-ray emission spectroscopy and first-principles calculations. X-ray absorption and emission measurements reveal that most Co dopants are incorporated at the Zn sites and that free charge carriers are absent over a wide range of Co concentrations. The excess Co interstitials appear in the samples with high Co concentration (10at.%) but are isolated without any direct exchange interaction with substitutional Co atoms. The lack of free charge carriers and the direct Co-Co interactions is responsible for the absence of ferromagnetism in the samples. First-principles calculations suggest that the exchange interaction between substitutional Co atoms induces only an antiferromagnetic coupling, and strong ferromagnetism in Co-doped ZnO requires not only free charge carriers but also the Co interstitials directly interacting with substitutional Co atoms.

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  • Received 9 November 2006

DOI:https://doi.org/10.1103/PhysRevB.75.195215

©2007 American Physical Society

Authors & Affiliations

G. S. Chang1,*, E. Z. Kurmaev2, D. W. Boukhvalov3, L. D. Finkelstein2, S. Colis4, T. M. Pedersen1, A. Moewes1, and A. Dinia4

  • 1Department of Physics and Engineering Physics, University of Saskatchewan, 116 Science Place, Saskatoon, SK, Canada S7N 5E2
  • 2Institute of Metal Physics, Russian Academy of Sciences–Ural Division, 620041 Yekaterinburg, Russia
  • 3Institute for Molecules and Materials, Radboud University, NL-6525 ED Nijmegen, The Netherlands
  • 4IPCMS CNRS-UMR 7504, ULP-ECPM, 23 Rue du Loess, F-67034 Strasbourg, France

  • *Corresponding author. E-mail address: gapsoo.chang@usask.ca

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Vol. 75, Iss. 19 — 15 May 2007

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