Dephasing time of two-dimensional holes in GaAs open quantum dots: Magnetotransport measurements

S. Faniel, B. Hackens, A. Vlad, L. Moldovan, C. Gustin, B. Habib, S. Melinte, M. Shayegan, and V. Bayot
Phys. Rev. B 75, 193310 – Published 22 May 2007

Abstract

We report magnetotransport measurements of two-dimensional holes in open quantum dots, patterned as either a single dot or an array of dots, on a GaAs quantum well. For temperatures T below 500mK, we observe signatures of coherent transport, namely, conductance fluctuations and weak antilocalization. From these effects, the hole dephasing time τϕ together with an upper limit for the spin-orbit scattering time are extracted using the random matrix theory. The calculated τϕ shows a T dependence close to T2, and its absolute value is found to be approximately one order of magnitude smaller than that reported for electrons.

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  • Received 13 February 2007

DOI:https://doi.org/10.1103/PhysRevB.75.193310

©2007 American Physical Society

Authors & Affiliations

S. Faniel1,*, B. Hackens1, A. Vlad1, L. Moldovan1, C. Gustin1, B. Habib2, S. Melinte1, M. Shayegan2, and V. Bayot1

  • 1Cermin, PCPM and DICE Laboratories, Université Catholique de Louvain, 1348 Louvain-la-Neuve, Belgium
  • 2Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA

  • *Electronic address: faniel@pcpm.ucl.ac.be

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Vol. 75, Iss. 19 — 15 May 2007

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