Optical probe of electrostatic-doping in an n-type Mott insulator

M. Nakamura, A. Sawa, H. Sato, H. Akoh, M. Kawasaki, and Y. Tokura
Phys. Rev. B 75, 155103 – Published 6 April 2007

Abstract

Electrostatic-doping into an n-type Mott insulator Sm2CuO4 has been successfully achieved with use of the heterojunction with an n-type band semiconductor Nb-doped SrTiO3. The junction exhibits rectifying current-voltage characteristics due to the interface band discontinuity and the formation of depleted region. The application of reverse bias electric field on this junction enables the field-effect electron doping (presumably up to 6% per Cu atom) to the Mott insulator. The electromodulation absorption spectroscopy could clearly show a large modification of the Mott-gap state accompanying the spectral weight transfer to the lower-energy region, reminiscent of formation of a metallic state.

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  • Received 7 February 2007

DOI:https://doi.org/10.1103/PhysRevB.75.155103

©2007 American Physical Society

Authors & Affiliations

M. Nakamura*, A. Sawa, H. Sato, and H. Akoh

  • Correlated Electron Research Center (CERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8562, Japan and Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency (JST), Kawaguchi 332-0012, Japan

M. Kawasaki

  • Correlated Electron Research Center (CERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8562, Japan and Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

Y. Tokura

  • Correlated Electron Research Center (CERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8562, Japan and Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan

  • *Electronic address: m-nakamura@aist.go.jp

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Issue

Vol. 75, Iss. 15 — 15 April 2007

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