Interfacial structure, bonding and composition of InAs and GaSb thin films determined using coherent Bragg rod analysis

C. N. Cionca, D. A. Walko, Y. Yacoby, C. Dorin, J. Mirecki Millunchick, and R. Clarke
Phys. Rev. B 75, 115306 – Published 8 March 2007

Abstract

We have used Bragg rod x-ray diffraction combined with a direct method of phase retrieval to extract atomic resolution electron-density maps of a complementary series of heteroepitaxial III-V semiconductor samples. From the three-dimensional electron-density maps we derive the monolayer spacings, the chemical compositions, and the characteristics of the bonding for all atomic planes in the film and across the film-substrate interface. InAs films grown on GaSb(001) under two different As conditions (using dimer or tetramer forms) both showed conformal roughness and mixed GaAsInSb interfacial bonding character. The As tetramer conditions favored InSb bonding at the interface while, in the case of the dimer, the percentages corresponding to GaAs and InSb bonding were equal within the experimental error. The GaSb film grown on InAs(001) displayed significant In and As interdiffusion and had a relatively large fraction of GaAs-like bonds at the interface.

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  • Received 22 October 2006

DOI:https://doi.org/10.1103/PhysRevB.75.115306

©2007 American Physical Society

Authors & Affiliations

C. N. Cionca1,*, D. A. Walko2, Y. Yacoby3, C. Dorin4,†, J. Mirecki Millunchick4, and R. Clarke1

  • 1Applied Physics Program, Physics Department, University of Michigan, Ann Arbor, Michigan 48109, USA
  • 2Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA
  • 3Racah Institute of Physics, Hebrew University, Jerusalem 91904, Israel
  • 4Materials Science and Engineering Department, University of Michigan, Ann Arbor, Michigan 48109, USA

  • *Electronic address: codrin@umich.edu
  • Presently at Intel Corp.

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Vol. 75, Iss. 11 — 15 March 2007

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