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Role of electron capture in ion-induced electronic sputtering of insulators

M. Famá, B. D. Teolis, D. A. Bahr, and R. A. Baragiola
Phys. Rev. B 75, 100101(R) – Published 12 March 2007

Abstract

Measurements of the sputtering yield of solid O2 by 25240keV H+ show that it is double valued in its dependence on electronic stopping power. We propose that this is because the electronic sputtering yield is dominated by repulsion of ions in the ionization track of the projectile which, at low velocities, is augmented near the surface due to the additional ionization resulting from electron captures. This process may also be responsible for enhanced radiation damage in insulators, in particular in the production of fission tracks.

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  • Received 20 February 2007

DOI:https://doi.org/10.1103/PhysRevB.75.100101

©2007 American Physical Society

Authors & Affiliations

M. Famá, B. D. Teolis, D. A. Bahr, and R. A. Baragiola

  • Laboratory for Atomic and Surface Physics, University of Virginia, Charlottesville, Virginia 22904, USA

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Issue

Vol. 75, Iss. 10 — 1 March 2007

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