Quantitative analysis of Si mass transport during formation of CuSi(111)(5×5) from scanning tunneling microscopy

Y. P. Zhang, K. S. Yong, H. S. O. Chan, G. Q. Xu, S. Chen, X. S. Wang, and A. T. S. Wee
Phys. Rev. B 75, 073407 – Published 8 February 2007

Abstract

The Si mass transport taking place during the formation of the CuSi(111)(5×5) surface phase has been studied using scanning tunneling microscopy. From the measurement of the areas occupied by various structural domains and the quantitative consideration of the Si mass balance, the top Si atom density in the CuSi(111)(5×5) phase is found to be 0.96 monolayer. The CuSi(111)(5×5) structure is suggested to consist of a planar CuSi overlayer with an atomic ratio of Cu:Si close to 1:1. Further Cu deposition beyond the formation of CuSi(111)(5×5) phase results in the formation of Cu nanocrystals on the intermediate (5×5) layer.

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  • Received 10 October 2006

DOI:https://doi.org/10.1103/PhysRevB.75.073407

©2007 American Physical Society

Authors & Affiliations

Y. P. Zhang, K. S. Yong, H. S. O. Chan, and G. Q. Xu*

  • Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543

S. Chen, X. S. Wang, and A. T. S. Wee

  • Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542

  • *Electronic address: chmxugq@nus.edu.sg

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Issue

Vol. 75, Iss. 7 — 15 February 2007

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