Muon spin relaxation study of superconducting Bi2Sr2xLaxCuO6+δ

P. L. Russo, C. R. Wiebe, Y. J. Uemura, A. T. Savici, G. J. MacDougall, J. Rodriguez, G. M. Luke, N. Kaneko, H. Eisaki, M. Greven, O. P. Vajk, S. Ono, Yoichi Ando, K. Fujita, K. M. Kojima, and S. Uchida
Phys. Rev. B 75, 054511 – Published 15 February 2007

Abstract

We have performed transverse-field (TF) and zero-field (ZF) μSR measurements of Bi2Sr2xLaxCuO6+δ (Bi2201) systems with x=0.2, 0.4, 0.6, and 1.0, using ceramic specimens with modest c-axis alignment and single-crystal specimens. The absence of static magnetic order has been confirmed in underdoped (x=0.6) and optimally doped (x=0.4) systems at T=2K, while only a very weak signature towards static magnetism has been found at T=2K in the x=1.0 system, which is a lightly hole-doped nonsuperconducting insulator. In the superconducting (x=0.6, 0.4, and 0.2) systems, the relaxation rate σ in TF-μSR, proportional to nsm* (superconducting carrier density and effective mass), followed a general trend found in other cuprate systems in a plot of Tc vs nsm*(T0). Assuming the in-plane effective mass m* for Bi2201 to be comparable to three to four times the bare electron mass me as found in La2xSrxCuO4 (LSCO) and YBa2Cu3O7δ (YBCO) systems, we obtain ns0.150.2 per Cu for the x=0.4 Bi2201 system. This carrier density is much smaller than the Hall number nHall10 per Cu obtained at T<1.6K in high magnetic fields (4060T) along the c axis applied to suppress superconductivity. The present results of the superfluid density (nsm*) in Bi2201 are compared with those from other cuprate systems, including YBCO systems with very much reduced Tc<20K studied by microwave, Hc1, and inductance methods. Additional muon-spin-relaxation (μSR) measurements have been performed on a single-crystal specimen of Bi2201 (x=0.4) in a high transverse magnetic field of 5T parallel to the c axis, in order to search for the field-induced muon spin relaxation recently found in LSCO and some other high-temperature superconducting cuprate (HTSC) systems well above Tc. The nearly temperature-independent and very small relaxation rate observed in Bi2201 above Tc rules out a hypothesis that the field-induced relaxation is directly proportional to the magnitude of the Nernst coefficient, which is a measure of the strength of dynamic superconductivity. We also describe a procedure for angular averaging of σ in μSR measurements using ceramic specimens with modest alignment of c-axis orientations, together with the neutron-scattering results obtained for determining the orientation distribution of microcrystallites in the present ceramic specimens.

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  • Received 8 February 2006

DOI:https://doi.org/10.1103/PhysRevB.75.054511

©2007 American Physical Society

Authors & Affiliations

P. L. Russo*, C. R. Wiebe, and Y. J. Uemura

  • Department of Physics, Columbia University, New York, New York 10027, USA

A. T. Savici

  • Department of Physics, Columbia University, New York, New York 10027, USA and Brookhaven National Laboratory, Upton, New York, New York 11973, USA

G. J. MacDougall, J. Rodriguez, and G. M. Luke

  • Department of Physics and Astronomy, McMaster University, Hamilton, Ontario, Canada, L8P 4N3

N. Kaneko§, H. Eisaki, and M. Greven

  • Deptartment of Applied Physics, Stanford University, Stanford, California 94305, USA

O. P. Vajk

  • NIST Center for Neutron Research, Gaithersburg, Maryland 20899, USA

S. Ono and Yoichi Ando

  • Central Research Institute of Electric Power Industry (CRIEPI), 2-11-1 Iwado Kita, Komae, Tokyo 201-8511, Japan

K. Fujita, K. M. Kojima, and S. Uchida

  • Department Physics, University of Tokyo, Tokyo 113-8656, Japan

  • *Present address: TRIUMF, 4004 Wesbrook Mall, Vancouver, B.C., Canada V6T 2A3.
  • Present address: Department of Physics and NHMFL, Florida State University, Tallahassee, Florida 32310-4005.
  • Author to whom correspondence should be addressed. Email address: tomo@lorentz.phys.columbia.edu
  • §Present address: National Metrology Institute of Japan, AIST, Tsukuba 305-8568, Japan.
  • Present address: Nanoelectronic Research Institute, AIST, Tsukuba 305-8568, Japan.

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Vol. 75, Iss. 5 — 1 February 2007

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