Pressure-induced isostructural phase transition of metal-doped silicon clathrates

Toshiaki Iitaka
Phys. Rev. B 75, 012106 – Published 16 January 2007

Abstract

We propose an atomistic model for the pressure-induced isostructural phase transition of metal-doped silicon clathrates Ba8Si46 and K8Si46 that has been observed at 14 and 23GPa, respectively. The model successfully explains the equation of state, transition pressure, change of Raman spectra, and dependence on the doped cations as well as the effects of substituting Si(6c) atoms with noble metals.

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  • Received 23 September 2005

DOI:https://doi.org/10.1103/PhysRevB.75.012106

©2007 American Physical Society

Authors & Affiliations

Toshiaki Iitaka*

  • Computational Astrophysics Laboratory, RIKEN (The Institute of Physical and Chemical Research), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan

  • *Electronic address: tiitaka@riken.jp; http://www.iitaka.org/

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Vol. 75, Iss. 1 — 1 January 2007

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