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Polarity of space charge fields in second-harmonic generation spectra of Si(100)SiO2 interfaces

A. Rumpel, B. Manschwetus, G. Lilienkamp, H. Schmidt, and W. Daum
Phys. Rev. B 74, 081303(R) – Published 2 August 2006

Abstract

Optical second-harmonic generation spectra of Si(100)SiO2 interfaces exhibit characteristic differences for positively or negatively charged space charge regions (SCRs). These differences originate from interference of the second-harmonic light generated in the SCR with that generated by Si atoms in immediate proximity to the oxide and characterize the direction of the electric field of the SCR. The sensitivity of second-harmonic generation to the sign of the space charge is demonstrated for the negative space charge at alkali-metal-modified Si(100)SiO2 interfaces, and for the positively charged accumulation layer caused by laser-induced surface traps in thin oxides.

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  • Received 2 June 2006

DOI:https://doi.org/10.1103/PhysRevB.74.081303

©2006 American Physical Society

Authors & Affiliations

A. Rumpel1, B. Manschwetus1,*, G. Lilienkamp1, H. Schmidt2, and W. Daum1,†

  • 1Institut für Physik und Physikalische Technologien, TU Clausthal, Leibnizstrasse 4, D-38678 Clausthal-Zellerfeld, Germany
  • 2Institut für Metallurgie, TU Clausthal, Robert-Koch-Strasse 42, D-38678 Clausthal-Zellerfeld, Germany

  • *Present address: Max-Born-Institut für nichtlineare Optik, Berlin, Germany.
  • Electronic address: winfried.daum@tu-clausthal.de

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Issue

Vol. 74, Iss. 8 — 15 August 2006

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