Stress relaxation effect on transport properties of strained vanadium dioxide epitaxial thin films

Kazuki Nagashima, Takeshi Yanagida, Hidekazu Tanaka, and Tomoji Kawai
Phys. Rev. B 74, 172106 – Published 17 November 2006

Abstract

A stress relaxation effect on the transport properties of strained vanadium dioxide epitaxial thin films grown on TiO2 (001) single crystal was investigated. When varying the film thickness ranging from 10to30nm, there were no significant changes on the crystal structures identified by x-ray diffraction, i.e., no observable stress relaxation effects. On the other hand, increasing the film thickness resulted in the drastic changes on the transport properties including emerging the multisteps of the metal-insulator transition and also increasing the resistivity. The discrepancy between the observed crystal structure and the transport properties was related to the presence of the nanoscale line cracks due to thermal stress. Thus controlling thermal stress relaxation rather than the stress due to the lattice mismatch is critical to investigate the intrinsic nature on the transport properties of strained vanadium dioxide epitaxial thin films.

    • Received 13 July 2006

    DOI:https://doi.org/10.1103/PhysRevB.74.172106

    ©2006 American Physical Society

    Authors & Affiliations

    Kazuki Nagashima, Takeshi Yanagida*, Hidekazu Tanaka, and Tomoji Kawai

    • Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

    • *Corresponding author. Email address: yanagi32@sanken.osaka-u.ac.jp

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    Issue

    Vol. 74, Iss. 17 — 1 November 2006

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