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Intraband magnetospectroscopy of singly and doubly charged n-type self-assembled quantum dots

B. A. Carpenter, E. A. Zibik, M. L. Sadowski, L. R. Wilson, D. M. Whittaker, J. W. Cockburn, M. S. Skolnick, M. Potemski, M. J. Steer, and M. Hopkinson
Phys. Rev. B 74, 161302(R) – Published 13 October 2006

Abstract

The influence of quantum dot occupancy and incident light polarization on the carrier-lattice interactions in electron-doped InAs quantum dots grown on GaAs has been investigated up to 28T by far-infrared magnetotransmission spectroscopy. An enhancement of the electron-phonon coupling with increased electron population from one to two electrons per dot is observed, in close agreement with the predicted 2 increase due to the antisymmetrization of the electron wave function in the two-electron quantum dot system. This contrasts with two-dimensional systems in which the polaron coupling strength is reduced with increasing electron density due to the screening effect of multiple carriers on the electron-phonon interaction. A clear change of the polarization dependence for transitions from the ground to the first excited state from linear to circular has been observed as the Zeeman splitting becomes larger than the zero-field excited state splitting energy.

    • Received 3 August 2006

    DOI:https://doi.org/10.1103/PhysRevB.74.161302

    ©2006 American Physical Society

    Authors & Affiliations

    B. A. Carpenter1,*, E. A. Zibik1, M. L. Sadowski2, L. R. Wilson1,†, D. M. Whittaker1, J. W. Cockburn1, M. S. Skolnick1, M. Potemski2, M. J. Steer3, and M. Hopkinson3

    • 1Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, United Kingdom
    • 2Grenoble High Magnetic Field Laboratory, CNRS, Grenoble, France
    • 3EPSRC National Centre for III-V Technologies, Sheffield, S1 3JD, United Kingdom

    • *Electronic address: b.carpenter@sheffield.ac.uk
    • Electronic address: luke.wilson@sheffield.ac.uk

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    Issue

    Vol. 74, Iss. 16 — 15 October 2006

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