Abstract
We present a direct comparison of intensities of Raman scattering from the radial breathing mode of semiconducting single-walled carbon nanotubes under excitations resonant with different electronic transitions. Incident light frequency in our experiments is tuned to be resonant with either or transitions. We find that the difference in measured Raman intensities varies from one to several orders of magnitude, depending on the nanotube chiralities. The results are interpreted using the recently developed model for chirality dependence of the Raman cross section and taking into account the difference in decay rates for the exciton states excited by the and transitions. From our data it follows that the exciton state excited by the transition decays to times faster than the state excited by the transition. This conclusion is supported by the observation that Raman excitation profile linewidths are significantly broadened compared to those for excitation, which show a two-peak structure. These results provide additional evidence that dark excitonic states and trapping sites may contribute strongly to observed emission decay rates.
- Received 14 August 2006
DOI:https://doi.org/10.1103/PhysRevB.74.155409
©2006 American Physical Society