Engineering the spatial confinement of exciton polaritons in semiconductors

R. Idrissi Kaitouni, O. El Daïf, A. Baas, M. Richard, T. Paraiso, P. Lugan, T. Guillet, F. Morier-Genoud, J. D. Ganière, J. L. Staehli, V. Savona, and B. Deveaud
Phys. Rev. B 74, 155311 – Published 16 October 2006

Abstract

We demonstrate three-dimensional spatial confinement of exciton-polaritons in a semiconductor microcavity. Polaritons are confined within a micron-sized region of slightly larger cavity thickness, called mesa, through lateral trapping of their photon component. This results in a shallow potential well that allows the simultaneous existence of extended states above the barrier. Photoluminescence spectra were measured as a function of either the emission angle or the position on the sample. Striking signatures of confined states of lower and upper polaritons, together with the corresponding extended states at higher energy, were found. In particular, the confined states appear only within the mesa region, and are characterized by a discrete energy spectrum and a broad angular pattern. A theoretical model of polariton states, based on a realistic description of the confined photon modes, supports our observations.

    • Received 14 August 2006

    DOI:https://doi.org/10.1103/PhysRevB.74.155311

    ©2006 American Physical Society

    Authors & Affiliations

    R. Idrissi Kaitouni1, O. El Daïf1, A. Baas1, M. Richard1, T. Paraiso1, P. Lugan1,2, T. Guillet3, F. Morier-Genoud1, J. D. Ganière1, J. L. Staehli1, V. Savona2,*, and B. Deveaud1

    • 1Institute of Quantum Electronics and Photonics, Ecole Polytechnique Fédérale de Lausanne EPFL, CH-1015 Lausanne, Switzerland
    • 2Institute of Theoretical Physics, Ecole Polytechnique Fédérale de Lausanne EPFL, CH-1015 Lausanne, Switzerland
    • 3Groupe d’Etude des Semiconducteurs (GES), Université de Montpellier II, Place Eugène Bataillon, F-34095 Montpellier, France

    • *Electronic address: vincenzo.savona@epfl.ch

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    Issue

    Vol. 74, Iss. 15 — 15 October 2006

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