Oxidation of Si during the growth of SiOx by ion-beam sputter deposition: In situ x-ray photoelectron spectroscopy as a function of oxygen partial pressure and deposition temperature

Kyung Joong Kim, Jeong Won Kim, Moon-Seung Yang, and Jung Hoon Shin
Phys. Rev. B 74, 153305 – Published 10 October 2006

Abstract

Oxidation of silicon during the growth of silicon oxide by ion beam sputter deposition was studied by in situ x-ray photoelectron spectroscopy as a function of oxygen partial pressure at various deposition temperatures below 600°C. At low temperatures, the variation of incorporated oxygen content is similar to a dissociative adsorption isotherm of O2 on Si indicating that the surface-confined reaction of the deposited Si atoms with the adsorbed oxygen atoms is the main process. However, it shows a three-step variation with the oxygen partial pressure at high temperatures. The evolution of SiO species confirmed by the XPS indicates that an adsorption-induced surface reaction and a diffusion-induced internal reaction are the main pathways for the Si oxidation.

    • Received 25 April 2006

    DOI:https://doi.org/10.1103/PhysRevB.74.153305

    ©2006 American Physical Society

    Authors & Affiliations

    Kyung Joong Kim* and Jeong Won Kim

    • Nano Surface Group, Korea Research Institute of Standards and Science (KRISS), P.O. Box 102, Yusong, Taejon 305-600, Korea

    Moon-Seung Yang and Jung Hoon Shin

    • Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Kusung-dong, Yusong-gu, Taejon, Korea

    • *Corresponding author. Electronic address: kjkim@kriss.re.kr

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    Issue

    Vol. 74, Iss. 15 — 15 October 2006

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