Pseudogap in electron-doped superconducting Sm2xCexCuO4δ by interlayer magnetotransport

Tsuyoshi Kawakami, Takasada Shibauchi, Yuhki Terao, and Minoru Suzuki
Phys. Rev. B 74, 144520 – Published 30 October 2006

Abstract

c-axis interlayer magnetoresistivity is measured for an electron-doped (n-type) superconducting cuprate Sm2xCexCuO4δ with x=0.140.16 using 30nm thick small mesa structures. A systematic doping dependence is observed in the negative interlayer magnetoresistance (MR) component, from which the pseudogap onset temperature T* is determined as the negative MR appearance temperature. For a doping level close to the phase boundary between superconductivity and antiferromagnetism, a T* of 48K is observed. It is also found that T* decreases systematically with increasing x but is still higher than Tc. For all the doping levels, the result represents features characteristic of hole-doped (p-type) cuprates in the overdoped region, suggesting that the phase diagrams for the pseudogap are primarily similar for both the n- and p-type cuprates.

    • Received 26 December 2005

    DOI:https://doi.org/10.1103/PhysRevB.74.144520

    ©2006 American Physical Society

    Authors & Affiliations

    Tsuyoshi Kawakami*, Takasada Shibauchi, Yuhki Terao, and Minoru Suzuki

    • Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-Katsura, Nishikyo-ku, Kyoto 615-8510, Japan

    • *Electronic address: tsuyoshi@sk.kuee.kyoto-u.ac.jp
    • Department of Physics, Kyoto University, Sakyo-ku, Kyoto 606-8502, Japan

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    Issue

    Vol. 74, Iss. 14 — 1 October 2006

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