Temperature dependence of the electric-field gradient in hcp-Cd from first principles

D. Torumba, K. Parlinski, M. Rots, and S. Cottenier
Phys. Rev. B 74, 144304 – Published 13 October 2006

Abstract

We determine the temperature dependence of the electric-field gradient in hcp-Cd from first principles. The calculations are based on the ab initio determination of the phonon density of states spectrum of the solid. Using only moderate accuracy requirements, the temperature dependence of the electric-field gradient in hcp-Cd is reasonably well reproduced. The origin of its peculiar T32 dependence is discussed.

    • Received 5 July 2006

    DOI:https://doi.org/10.1103/PhysRevB.74.144304

    ©2006 American Physical Society

    Authors & Affiliations

    D. Torumba1, K. Parlinski2, M. Rots1, and S. Cottenier1,*

    • 1Instituut voor Kern- en Stralingsfysica–INPAC, Katholieke Universiteit Leuven, Celestijnenlaan 200 D, B-3001 Leuven, Belgium
    • 2Institute of Technics, Pedagogical University, ulica Podchorążych 2, 30-084 Cracow, Poland

    • *Electronic address: Stefaan.Cottenier@fys.kuleuven.be

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    Issue

    Vol. 74, Iss. 14 — 1 October 2006

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