Hafnium silicide formation on Si(100) upon annealing

A. de Siervo, C. R. Flüchter, D. Weier, M. Schürmann, S. Dreiner, C. Westphal, M. F. Carazzolle, A. Pancotti, R. Landers, and G. G. Kleiman
Phys. Rev. B 74, 075319 – Published 16 August 2006

Abstract

High dielectric constant materials, such as HfO2, have been extensively studied as alternatives to SiO2 in new generations of Si based devices. Hf silicate∕silicide formation has been reported in almost all literature studies of Hf based oxides on Si, using different methods of preparation. A silicate interface resembles close to the traditional SiSiO2. The silicate very likely forms a very sharp interface between the Si substrate and the metal oxide, and would be suitable for device applications. However, the thermal instability of the interfacial silicate∕oxide film leads to silicidation, causing a dramatic loss of the gate oxide integrity. Despite the importance of the Hf silicide surface and interface with Si, only a few studies of this surface are present in the literature, and a structural determination of the surface has not been reported. This paper reports a study of the Hf silicide formation upon annealing by using a combination of XPS, LEED, and x-ray photoelectron diffraction (XPD) analyses. Our results clearly indicate the formation of a unique ordered Hf silicide phase (HfSi2), which starts to crystallize when the annealing temperature is higher than 550°C.

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  • Received 14 March 2006

DOI:https://doi.org/10.1103/PhysRevB.74.075319

©2006 American Physical Society

Authors & Affiliations

A. de Siervo1,2,*, C. R. Flüchter1, D. Weier1, M. Schürmann1, S. Dreiner1, C. Westphal1, M. F. Carazzolle3, A. Pancotti3, R. Landers3, and G. G. Kleiman3

  • 1Experimentelle Physik 1, Universität Dortmund, Otto-Hahn-Str. 4, D 44221 Dortmund, Germany
  • 2Laboratório Nacional de Luz Síncrotron, Caixa Postal 6192, 13084-971, Campinas, São Paulo, Brazil
  • 3Instituto de Física “Gleb Wataghin,” Universidade Estadual de Campinas, Caixa Postal 6165, 13083-970, Campinas, São Paulo, Brazil

  • *Corresponding author. Email address: abner@lnls.br

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Vol. 74, Iss. 7 — 15 August 2006

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