Spin-glass-like behavior of Ge:Mn

C. Jaeger, C. Bihler, T. Vallaitis, S. T. B. Goennenwein, M. Opel, R. Gross, and M. S. Brandt
Phys. Rev. B 74, 045330 – Published 28 July 2006

Abstract

We present a detailed study of the magnetic properties of low-temperature molecular-beam-epitaxy-grown Ge:Mn dilute magnetic semiconductor films. We find strong indications for a frozen state of Ge1xMnx, with freezing temperatures of Tf=12K and Tf=15K for samples with x=0.04 and x=0.2, respectively, determined from the difference between field-cooled and zero-field-cooled magnetization. For Ge0.96Mn0.04, ac susceptibility measurements show a peak around Tf, with the peak position Tf shifting as a function of the driving frequency f by ΔTf[TfΔlogf]0.06, whereas for sample Ge0.8Mn0.2 a more complicated behavior is observed. Furthermore, both samples exhibit relaxation effects of the magnetization after switching the magnitude of the external magnetic field below Tf which are in qualitative agreement with the field- and zero-field-cooled magnetization measurements. These findings consistently show that Ge:Mn exhibits a frozen magnetic state at low temperatures and that it is not a conventional ferromagnet.

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  • Received 24 March 2006

DOI:https://doi.org/10.1103/PhysRevB.74.045330

©2006 American Physical Society

Authors & Affiliations

C. Jaeger*, C. Bihler, and T. Vallaitis

  • Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany

S. T. B. Goennenwein, M. Opel, and R. Gross

  • Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meissner-Strasse 8, 85748 Garching, Germany

M. S. Brandt

  • Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany

  • *Electronic address: christian.jaeger@wsi.tum.de
  • Present address: Universität Karlsruhe, Engesserstr. 5, 76131 Karlsruhe, Germany.

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Vol. 74, Iss. 4 — 15 July 2006

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