Growth dynamics of pentacene thin films: Real-time synchrotron x-ray scattering study

Alex C. Mayer, Ricardo Ruiz, Hua Zhou, Randall L. Headrick, Alexander Kazimirov, and George G. Malliaras
Phys. Rev. B 73, 205307 – Published 4 May 2006

Abstract

Real-time synchrotron x-ray scattering in the anti-Bragg configuration was used to monitor the dynamics of pentacene film growth on inert substrates. A distributed-growth model, according to which pentacene molecules adsorbed on the nth layer can either nucleate and contribute to the growth of the (n+1)th layer or transfer downward and contribute to the growth of the nth layer, gave a good description of the data. For molecules adsorbed on the first and second layers, the probability of downward transfer was found to be dependent on the substrate, and independent of temperature within the range from 25to60°C. For films grown on SiO2, an Ehrlich-Schwoebel barrier of the order of 70meV dominated downward transfer of pentacene molecules in layers away from the substrate. For films grown on an alkylated self-assembled monolayer, significant desorption of pentacene molecules from the substrate at elevated temperatures forced the growth mode toward the three-dimensional limit.

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  • Received 28 March 2006

DOI:https://doi.org/10.1103/PhysRevB.73.205307

©2006 American Physical Society

Authors & Affiliations

Alex C. Mayer1, Ricardo Ruiz1,*, Hua Zhou2, Randall L. Headrick2, Alexander Kazimirov3, and George G. Malliaras1,†

  • 1Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
  • 2Department of Physics, University of Vermont, Burlington, Vermont 05405, USA
  • 3Cornell High Energy Synchrotron Source, Ithaca, New York 14853, USA

  • *Present address: IBM T. J. Watson Research Laboratory, Yorktown Heights, NY 10598.
  • Author to whom correspondence should be addressed. Email address: ggm1@cornell.edu

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Issue

Vol. 73, Iss. 20 — 15 May 2006

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