Phase transition of the AgSi(111)(3×3) surface studied by photoelectron diffraction

Kazuyuki Sakamoto, Toshihiro Suzuki, Kenji Mawatari, Keisuke Kobayashi, Jun Okabayashi, Kanta Ono, Nobuo Ueno, and Masaharu Oshima
Phys. Rev. B 73, 193303 – Published 5 May 2006

Abstract

The local atomic structure of the Ag induced Si(111)(3×3) surface has been investigated using photoelectron diffraction (PED) at 10 and 300K. Two surface components, whose intensities varied by changing the photon energy as a consequence of diffraction effects, were observed in the Si2p core-level spectra at both temperatures. The good agreement between the experimental PED patterns of the Si2p surface components and the simulated PED patterns indicates that the atomic structure of this surface follows the inequivalent triangle model. Further, since the PED patterns obtained at 10 and 300K resemble each other closely, we conclude that the local atomic structure of the AgSi(111)(3×3) surface is the same at the two temperatures, and thus that the origin of the transition reported in the literature is an order-disorder transition.

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  • Received 22 February 2006

DOI:https://doi.org/10.1103/PhysRevB.73.193303

©2006 American Physical Society

Authors & Affiliations

Kazuyuki Sakamoto1,*, Toshihiro Suzuki2, Kenji Mawatari2, Keisuke Kobayashi2, Jun Okabayashi3, Kanta Ono4, Nobuo Ueno1, and Masaharu Oshima3

  • 1Graduate School of Science and Technology, Chiba University, Chiba 263-8522, Japan
  • 2Department of Physics, Graduate School of Science, Tohoku University, Sendai, 980-8578, Japan
  • 3Department of Applied Chemistry, The University of Tokyo, Tokyo 113-8656, Japan
  • 4Institute of Materials Structure Science, High Energy Accelerator Research Organization, Tsukuba 305-0801, Japan

  • *Electronic address: kazuyuki_sakamoto@faculty.chiba-u.jp

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Issue

Vol. 73, Iss. 19 — 15 May 2006

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