Effect of pressure and chemical substitutions on the charge-density-wave in LaAgSb2

S. L. Bud’ko, T. A. Wiener, R. A. Ribeiro, P. C. Canfield, Y. Lee, T. Vogt, and A. H. Lacerda
Phys. Rev. B 73, 184111 – Published 10 May 2006

Abstract

We present data on the crystal structure and evolution of the electrical resistivity in lightly doped La1xRxAgSb2 (R=Gd, Y, Ce, and Nd) at ambient pressure and in LaAgSb2 under hydrostatic pressure. The upper charge density wave transition is suppressed by both doping and pressure with substitution-related disorder being the dominant mechanism for this suppression in the former case and the anisotropic pressure dependence of the unit cell dimensions (as seen in the ca ratio) prevailing in the latter case.

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  • Received 5 December 2005

DOI:https://doi.org/10.1103/PhysRevB.73.184111

©2006 American Physical Society

Authors & Affiliations

S. L. Bud’ko, T. A. Wiener, R. A. Ribeiro*, and P. C. Canfield

  • Ames Laboratory US DOE and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011, USA

Y. Lee and T. Vogt

  • Physics Department, Brookhaven National Laboratory, Upton, New York 11973-5000, USA

A. H. Lacerda

  • National High Magnetic Field Laboratory, Los Alamos Facility, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA

  • *Present address: Faculty of Integrated Arts and Sciences, Hiroshima University, 1-7-1 Kagamiyama, Higashi-Hiroshima, Hiroshima, 739-8521 Japan.
  • Present address: Department of Earth System Sciences, Yonsei University, Seoul, 120749 Korea.
  • Present address: Nanocenter and Department of Chemistry and Biochemistry, University of South Carolina, Columbia, SC 29208.

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Issue

Vol. 73, Iss. 18 — 1 May 2006

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