Vacancy-impurity pairs in relaxed Si1xGex layers studied by positron annihilation spectroscopy

M. Rummukainen, J. Slotte, K. Saarinen, H. H. Radamson, J. Hållstedt, and A. Yu. Kuznetsov
Phys. Rev. B 73, 165209 – Published 14 April 2006

Abstract

Positron annihilation spectroscopy was applied to study relaxed P-doped n-type and undoped Si1xGex layers with x up to 0.30. The as-grown SiGe layers were found to be defect free and annihilation parameters in a random SiGe alloy could be represented as superpositions of annihilations in bulk Si and Ge. A 2MeV proton irradiation with a 1.6×1015cm2 fluence was used to produce saturated positron trapping in monovacancy related defects in the n-type layers. The defects were identified as V-P pairs, the E center. The distribution of Si and Ge atoms surrounding the E center was the same as in the host lattice. The process leading to the formation of V-P pairs therefore does not seem to have a significant preference for either Si or Ge atoms. In undoped Si1xGex we find that a similar irradiation produces a low concentration of divacancies or larger vacancy defects and found no evidence of monovacancies surrounded by several Ge atoms.

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  • Received 25 January 2006

DOI:https://doi.org/10.1103/PhysRevB.73.165209

©2006 American Physical Society

Authors & Affiliations

M. Rummukainen*, J. Slotte, and K. Saarinen

  • Laboratory of Physics, Helsinki University of Technology, P.O.Box 1100 FIN-02015 HUT, Finland

H. H. Radamson and J. Hållstedt

  • School of Information and Communication Technology, Kungliga Tekniska Högskolan, Isafjordsgatan 22 V 26, Electrum 229, 16440 Kista, Sweden

A. Yu. Kuznetsov

  • Department of Physics, Oslo University, Physical Electronics, P.B. 1048, Blindern N-0316 Oslo, Norway

  • *Electronic address: mru@fyslab.hut.fi
  • Deceased, December 2005

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Vol. 73, Iss. 16 — 15 April 2006

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