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Electron localization in metallic quantum wells: Pb versus In on Si(111)

J. H. Dil, J. W. Kim, Th. Kampen, K. Horn, and A. R. H. F. Ettema
Phys. Rev. B 73, 161308(R) – Published 27 April 2006

Abstract

Two-dimensional quantum well states in ultrathin metal films generally exhibit a dispersion relation of s-p-derived states that can be described through an effective mass of the corresponding bulk band. By contrast, the effective masses in Pb quantum well states on Si(111), measured through angle-resolved photoemission, are up to an order of magnitude larger than those from the bulk states or predicted by slab calculations, while similar anomalies are not observed in the related InSi(111) system. We interpret these data in terms of an enhanced electron localization, and use them to interpret recent scanning tunneling microscopy results.

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  • Received 3 April 2006

DOI:https://doi.org/10.1103/PhysRevB.73.161308

©2006 American Physical Society

Authors & Affiliations

J. H. Dil, J. W. Kim*, Th. Kampen, and K. Horn

  • Department of Molecular Physics, Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany

A. R. H. F. Ettema

  • Department of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628CJ Delft, The Netherlands

  • *Present address: Korea Research Institute of Standards and Science, P.O. Box 102, Daejon 305–600, Korea.

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Issue

Vol. 73, Iss. 16 — 15 April 2006

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